| Electronic structure of Yb/H－Si (111) interface |
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| 引用本文： | 李宏年,王晓雄,何少龙,张寒杰,李海洋,鲍世宁.Electronic structure of Yb/H－Si (111) interface[J].中国物理 B,2004,13(11):1941-1946. |
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| 作者姓名： | 李宏年 王晓雄 何少龙 张寒杰 李海洋 鲍世宁 |
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| 作者单位： | Department of Physics and the Central Laboratory, Zhejiang University, Hangzhou 310027, China |
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| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 10074053). |
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| 摘 要： | Photoemission spectra are measured for Yb covered surface of wet-chemically-etched H－Si (111). The results reveal that the lattice structure of the H－Si (111) surface is stable against the deposition of Yb atoms. X-ray photoemission spectra indicate the formation of a polarized (dipole) surface layer, with the silicon negatively charged. Ultraviolet photoemission spectra exhibit the semiconducting property of the interface below one monolayer coverage. Work function variation during the formation of the Yb/H－Si (111) interface is measured by the secondary-electron cutoff in the ultraviolet photoemission spectral line. The largest decrease of work function is ～1.65eV. The contributions of the dipole surface layer and the band bending to the work function change are determined to be ～1.15eV and ～0.5eV, respectively. The work function of metal Yb is determined to be ～2.80±0.05eV.
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| 关 键 词： | Yb/H－Si (111) photoemission spectra electronic structure work function |
| 收稿时间： | 2003-12-22 |
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