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低阻抗大面积二极管的研制
引用本文:黄种亮,徐启福,来定国,杨实,杨莉,邱孟通,丛培天,任书庆,王强.低阻抗大面积二极管的研制[J].强激光与粒子束,2016,28(1):014005.
作者姓名:黄种亮  徐启福  来定国  杨实  杨莉  邱孟通  丛培天  任书庆  王强
作者单位:1.清华大学 工程物理系, 北京 1 00084;
摘    要:采用高纯石墨环状阴极和有机玻璃绝缘子,研制了一套低阻抗大面积二极管系统。使用理论计算和数值模拟方法对二极管进行优化设计,在保证绝缘要求的同时,尽量优化二极管轴向长度和内外筒距离以减小二极管的回路电感。实验结果表明,优化后的二极管能在200 kV左右的电压上稳定工作,绝缘结构未发生击穿现象;实验中最高输出电压为213 kV,电流为221 kA,特性阻抗约为1 ,电流密度为8 kA/cm2,脉宽(FWHM)为50 ns。

关 键 词:低阻抗二极管    径向绝缘    电场分布    强流电子束
收稿时间:2015-09-17

A low impedance large surface diode
Affiliation:1.Department of Engineering Physics,Tsinghua University,Beijing 100084,China;2.State Key Laboratory of Intense Pulsed Radiation Simulation and Effect,Northwest Institute of Nuclear Technology,P.O.Box 69-10,Xi’an 710024,China
Abstract:A low impedance large surface diode system with high purity graphite ring cathode and organic glass insulation is developed. The diode is optimally designed by using theoretical calculation and numerical simulation. Under the premise of ensuring the insulation safety, the axial length and the gap between the inner and outer canisters of diode are cut down to decrease the inductance of diode. The experimental result shows that the diode after optimal design works stably without breakdown at the voltage of 200 kV. The result with a max voltage of 213 kV, a current of 221 kA, a characteristic impedance of 1 , a current density of 8 kA/cm2 and an FWHM of 50 ns is achieved in the experiment.
Keywords:
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