| 硒化铟材料的发展及其光电器件应用 |
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| 引用本文： | 赵清华,郑丹,陈鹏,王涛,介万奇.硒化铟材料的发展及其光电器件应用[J].人工晶体学报,2022,51(9-10):1703-1721. |
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| 作者姓名： | 赵清华 郑丹 陈鹏 王涛 介万奇 |
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| 作者单位： | 1.西北工业大学,辐射探测材料与器件工信部重点实验室,西安 710072;2.西北工业大学深圳研究院,深圳 518063 |
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| 基金项目： | 国家自然科学基金(52072300);特色学科基础研究项目(G2022WD);西北工业大学深圳研究院,深圳虚拟大学园项目(2021Szvup110) |
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| 摘 要： | 自2004年发现石墨烯以来,二维材料以其丰富的带隙结构、独特的光电特性和无悬挂键的范德瓦耳斯表面等,极大地拓宽了半导体电子、光电子器件的设计维度。其中二维硒化铟材料成为最具竞争力的未来高迁移率光电子器件用候选材料,被诺贝尔奖获得者Andre Geim认为是“硅和石墨烯的‘黄金分割点’”。但人们对二维硒化铟材料的研究仅有不到十年的时间,对其制备及应用的认识仍然不足。本文综述了二维硒化铟材料及其光电器件的研究现状。另外,考虑到目前绝大多数二维硒化铟材料的研究是基于块状单晶体材料的机械剥离开始的,因此本文首先回顾了硒化铟晶体结构的认识及其制备方法的发展历程,在此基础上综述了二维硒化铟材料制备及其性能表征的前沿研究结果,探讨了器件结构、材料制备方法等因素对二维硒化铟场效应晶体管和光探测器电学输运特性的影响,最后分析了未来硒化铟材料及器件应用面临的机遇与挑战。
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| 关 键 词： | 二维材料 硒化铟 晶体生长 场效应晶体管 光探测器 |
| 收稿时间： | 2022-07-27 |
Research Progress on Indium Selenide Crystals and Optoelectronic Devices |
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| ZHAO Qinghua,ZHENG Dan,CHEN Peng,WANG Tao,JIE Wanqi.Research Progress on Indium Selenide Crystals and Optoelectronic Devices[J].Journal of Synthetic Crystals,2022,51(9-10):1703-1721. |
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| Authors: | ZHAO Qinghua ZHENG Dan CHEN Peng WANG Tao JIE Wanqi |
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| Affiliation: | 1. Key Laboratory of Radiation Detection Materials and Devices, Ministry of Industry and Information Technology, Northwestern Polytechnical University, Xi’an 710072, China; 2. Shenzhen Research Institute of Northwestern Polytechnical University, Shenzhen 518063, China |
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| Abstract: | Since the discovery of graphene in 2004, the research and application of two-dimensional (2D) materials have received great attention and developed rapidly. Abundant band gap structures, unique optoelectronic properties, and van der Waals surfaces without dangling bonds greatly broaden the design dimensions of semiconducting electronics and optoelectronics. Among them, the two-dimensional indium selenide, as one of the most promising candidates for future high-mobility optoelectronic devices, it has been recognized as “the ‘golden middle’ between silicon and graphene” by Nobel Prize winner Andre Geim. However, the research on two-dimensional indium selenide material has only been less than ten years, and the understanding of crystals fabrication and device application is still insufficient. This work mostly focuses on the development of indium selenide materials and the research status of its electronic and optoelectronic devices. In addition, considering that the present research on 2D indium selenide are mostly based on mechanical exfoliation of InSe bulks, the development of the crystal structure characterization and crystals fabrication are traced in this paper, then the state-of-the-art on the preparation and performance characterization of two-dimensional indium selenide are further summarized, and the influence of device geometries, material fabrication method and other factors on the electrical transport performance of 2D indium selenide field effect transistors and photodetectors are further discussed, and ended with analysis of the opportunities and challenges for future indium selenide based applications. |
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| Keywords: | two-dimensional material indium selenide crystal growth field-effect transistor photodetector |
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