| Intracavity—Doubled Self—Q—Switched Nd,Cr：YAG 946／473nm Microchip Laser |
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| 引用本文： | 李德华,高春清,等.Intracavity—Doubled Self—Q—Switched Nd,Cr：YAG 946／473nm Microchip Laser[J].中国物理快报,2002,19(4):504-506. |
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| 作者姓名： | 李德华 高春清 |
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| 作者单位： | LaboratoryofOpticalPhysics,InstituteofPhysics,ChineseAcademyofSciences,Beijing100080 |
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| 摘 要： | We carried out the operation of an intracavity frequency-doubled self-Q-switched Nd,Cr:YAG/NHbO3 946/473nm microchip laser pumped by a Ti:sapphire laser.The overall cavity length was about 4mm.The maximum average blue power of 12mW was achieved with a repetition rate of 13kHz at an absorbed pump ower of 545mW.The pulses of the 473nm laser had a duration of 7ns and a peak power of 132W at this pump level.The conversion efficiency was 2.2% with respect to the absorbed pump power of a 808nm laser.
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| 关 键 词： | 激光器 Q－开关 存储 |
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