Stacked and nanolaminated Al2O3/TiO2 for surface passivation and encapsulation of silicon |
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| Authors: | Dongchul Suh |
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| Affiliation: | Global Frontier Center for Multiscale Energy Systems, Seoul National University, Seoul, Republic of Korea |
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| Abstract: | Silicon solar cells passivated with Al2O3 require a capping layer that protects the passivation layer from humidity because of sensitivity of Al2O3 to moisture. Al2O3/TiO2 stacks obtained by atomic layer deposition have been known to provide a high level of passivation layers because of their excellent field‐effect passivation. In this work, degradation of this Al2O3/TiO2 stack, when exposed to humidity, is examined, and an attempt is made for a humidity‐resistant encapsulation layer by adding Al2O3/TiO2 nanolaminates that can be deposited in‐situ without breaking vacuum. Placing the nanolaminate on top of the TiO2 and Al2O3 stack is found to lead to almost no degradation even after 10 days of humidity exposure. (© 2015 WILEY‐VCH Verlag GmbH &Co. KGaA, Weinheim) |
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| Keywords: | atomic layer deposition surface passivation nanolaminates Al2O3 TiO2 silicon |
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