Solution Layer Deposition: A Technique for the Growth of Ultra‐Pure Manganese Oxides on Silica at Room Temperature |
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| Authors: | Dr Jérémy Cure Dr Kilian Piettre Dr Yannick Coppel Dr Eric Beche Dr Jérôme Esvan Vincent Collière Dr Bruno Chaudret Dr Pierre Fau |
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| Affiliation: | 1. CNRS, LCC (Laboratoire de Chimie de Coordination), Toulouse Cedex 4, France;2. Université de Toulouse, Toulouse Cedex 4, France;3. STMicroelectronics SAS, Tours, France;4. PROMES-CNRS, Font-Romeu-Odeillo, France;5. CIRIMAT-ENSIACET, Toulouse Cedex 4, France;6. LPCNO, INSA-UPS-CNRS, Toulouse Cedex 4, France |
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| Abstract: | With the ever increasing miniaturization in microelectronic devices, new deposition techniques are required to form high‐purity metal oxide layers. Herein, we report a liquid route to specifically produce thin and conformal amorphous manganese oxide layers on silicon substrate, which can be transformed into a manganese silicate layer. The undesired insertion of carbon into the functional layers is avoided through a solution metal–organic chemistry approach named Solution Layer Deposition (SLD). The growth of a pure manganese oxide film by SLD takes place through the decoordination of ligands from a metal–organic complex in mild conditions, and coordination of the resulting metal atoms on a silica surface. The mechanism of this chemical liquid route has been elucidated by solid‐state 29Si MAS NMR, XPS, SIMS, and HRTEM. |
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| Keywords: | contamination-free magic angle spinning NMR manganese amidinate metal oxide layers solution deposition |
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