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Mobility enhancement of strained GaSb p-channel metal oxide semiconductor field-effect transistors with biaxial compressive strain |
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| Affiliation: | 1. Department of Physics, Tsinghua University, Beijing 100084, China;2. Tsinghua National Laboratory for Information Science and Technology, Institute of Microelectronics, Tsinghua University, Beijing 100084, China;3. Department of Electrical Engineering, Princeton University, Princeton, Princeton, NJ 08544, USA;4. School of Materials Science and Engineering, Beihang University, Beijing 100191, China |
| Abstract: | Various biaxial compressive strained GaSb p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) are experimentally and theoretically investigated. The biaxial compressive strained GaSb MOSFETs show a high peak mobility of 638 cm2/V·s, which is 3.86 times of the extracted mobility of the fabricated GaSb MOSFETs without strain. Meanwhile, first principles calculations show that the hole effective mass of GaSb depends on the biaxial compressive strain. The biaxial compressive strain brings a remarkable enhancement of the hole mobility caused by a significant reduction in the hole effective mass due to the modulation of the valence bands. |
| Keywords: | GaSb metal-oxide-semiconductor field-effect transistor strain first principles calculations |
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