Electronic transport properties of silicon junctionless nanowire transistors fabricated by femtosecond laser direct writing |
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| Affiliation: | Engineering Research Center for Semiconductor Integration Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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| Abstract: | Silicon junctionless nanowire transistor (JNT) is fabricated by femtosecond laser direct writing on a heavily n-doped SOI substrate. The performances of the transistor, i.e., current drive, threshold voltage, subthreshold swing (SS), and electron mobility are evaluated. The device shows good gate control ability and low-temperature instability in a temperature range from 10 K to 300 K. The drain currents increasing by steps with the gate voltage are clearly observed from 10 K to 50 K, which is attributed to the electron transport through one-dimensional (1D) subbands formed in the nanowire. Besides, the device exhibits a better low-field electron mobility of 290 cm2·V-1·s-1, implying that the silicon nanowires fabricated by femtosecond laser have good electrical properties. This approach provides a potential application for nanoscale device patterning. |
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| Keywords: | junctionless nanowire transistor femtosecond laser lithography electron mobility quantum transport |
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