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Spacer layer thickness fluctuation scattering in a modulation-doped Al<sub>x</sub>Ga<sub>1-x</sub>As/GaAs/Al<sub>x</sub>Ga<sub>1-x</sub>As quantum well
Authors:Gu Cheng-Yan  Liu Gui-Peng  Shi Kai  Song Ya-Feng  Li Cheng-Ming  Liu Xiang-Lin  Yang Shao-Yan  Zhu Qin-Sheng  and Wang Zhan-Guo
Affiliation:Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences, P.O.Box 912
Abstract:We theoretically study the influence of spacer layer thickness fluctuation(SLTF) on the mobility of a twodimensional electron gas(2DEG) in the modulation-doped Al x Ga 1 x As/GaAs/Al x Ga 1 x As quantum well.The dependence of the mobility limited by SLTF scattering on spacer layer thickness and donor density are obtained.The results show that SLTF scattering is an important scattering mechanism for the quantum well structure with a thick well layer.
Keywords:spacer layer thickness fluctuation scattering  interface roughness scattering  2DEG  mobility
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