| High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd：GdVO4 Laser |
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| 引用本文： | 周睿,;阮双琛,;杜晨林,;姚建铨.High Power Continuous-Wave Diode-End-Pumped 1.34-μm Nd：GdVO4 Laser[J].中国物理快报,2008,25(12):4273-4275. |
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| 作者姓名： | 周睿 ;阮双琛 ;杜晨林 ;姚建铨 |
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| 作者单位： | [1]Shenzhen Key Laboratory of Laser Engineering, College of Electronic Science and Technology, Shenzhen University Shenzhen 518060; [2]College of Precision Instrument and Optoelectronics Engineering, Institute of Laser and Optoelectronics, Tianjin University, Tianjin 300072 |
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| 基金项目： | Supported by the National Natural Science Foundation of China under Grant No 10804074, the Key Natural Science Research Project of Guangdong Higher Education Institutions （No 05Z019）, the Science and Technology Project of Shenzhen （No 200718）, the Key Laboratory Upgrading and Developing Project. |
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| 摘 要： | A high power cw all-solid-state 1.34-μm Nd：GdVO4 laser is experimentally demonstrated. With a diode-double-end-pumped configuration and a simple plane-parallel cavity, a maximum output power of 27.9 W is obtained at incident pump power of 96 W, introducing a slope efficiency of 35.4%. To the best of our knowledge, this is the highest output power of diode-end-pumped 1.3-μm laser. With the experimental data, the thermal-stress- resistance figure of merit of Nd：GdVO4 crystal with 0.3 at% Nd^3＋ doped level is calculated to be larger than 9.94 W/cm.
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| 关 键 词： | 波 实验室 连续性 理论 物理学 |
| 收稿时间： | 2008-5-5 |
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