| High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time |
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| 引用本文： | 徐学俊,陈少武,徐海华,孙阳,俞育德,余金中,王启明.High-speed 2×2 silicon-based electro-optic switch with nanosecond switch time[J].中国物理 B,2009,18(9):3900-3904. |
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| 作者姓名： | 徐学俊 陈少武 徐海华 孙阳 俞育德 余金中 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics,
Institute of Semiconductors, Chinese Academy of Sciences, Beijing
100083, China |
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| 基金项目： | Project supported by the National
Natural Science Foundation of China (Grant No 60577044), the State
Key Development Program for Basic Research of China (Grant No
2007CB613405) and the National High Technology Research and
Development Program of China (Grant No 2006AA032424). |
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| 摘 要： | A 2× 2 electro-optic switch is experimentally demonstrated
using the optical structure of a Mach--Zehnder interferometer (MZI) based
on a submicron rib waveguide and the electrical structure of a PIN diode on
silicon-on-insulator (SOI). The switch behaviour is achieved through
the plasma dispersion effect of silicon. The device has a modulation arm
of 1~mm in length and cross-section of 400~nm× 340~nm. The
measurement results show that the switch has a VπLπ
figure of merit of 0.145~V\cdot cm and the extinction ratios of two
output ports and cross talk are 40~dB, 28~dB and -28~dB,
respectively. A 3~dB modulation bandwidth of 90~MHz and a switch
time of 6.8~ns for the rise edge and 2.7~ns for the fall edge are also
demonstrated.
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| 关 键 词： | silicon-on-insulator electro-optic switch plasma dispersion effect switch time |
| 收稿时间： | 2008-12-26 |
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