Nitrogen Dioxide Sensing Properties and Mechanism of Copper Phthalocyanine Film |
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| Authors: | QIU Cheng-Jun DOU Yan-Wei ZHAO Quan-Liang QU Wei YUAN Jie SUN Yan-Mei CAO Mao-Sheng |
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| Affiliation: | School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081Laboratory of Integrated Circuit, Heilongjiang University, Harbin 150080College of Information Engineering, Central University for Nationalities, Beijing 100081 |
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| Abstract: | Copper phthalocyanine film, a p-type organic semiconductor, is synthesized by vacuum sublimation and its surface morphology is characterized by SEM. A silicon-based copper phthalocyanine film gas sensor for NO2 detection is fabricated by MEMS technology. The results show that the resistance and sensitivity of copper phthalocyanine film decrease obviously as the NO2 concentration increases from 0ppm to 100ppm. However, the sensitivity nearly keeps a constant of 0.158 between 30ppm and 70ppm. The best working temperature of the gas sensor is 90°C for NO2 gas concentrations of 10ppm, 20ppm and 30ppm, which is much lower than that of general metal oxide gas sensor. |
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| Keywords: | 07 07 Df 73 61 Ph |
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