Novel vertical stack HCMOSFET with strained SiGe/Si quantum channel |
| |
| Authors: | Jiang Tao Zhang He-Ming Wang Wei Hu Hui-Yong Dai Xian-Ying |
| |
| Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China |
| |
| Abstract: | ![]()
A novel vertical stack heterostructure CMOSFET is investigated, which isstructured by strained SiGe/Si with a hole quantum well channel in the compressively strained Si$_{1 - x}$Ge$_{x}$ layer for p-MOSFET and an electronquantum well channel in the tensile strained Si layer for n-MOSFET. The devicepossesses several advantages including: 1) the integration of electronquantum well channel with hole quantum well channel into the same verticallayer structure; 2) the gate work function modifiability due to theintroduction of poly-SiGe as a gate material; 3) better transistor matching;and 4) flexibility of layout design of CMOSFET by adopting exactly the samematerial lays for both n-channel and p-channel. The MEDICI simulation resultshows that p-MOSFET and n-MOSFET have approximately the same matchingthreshold voltages. Nice performances are displayed in transfercharacteristic, transconductance and cut-off frequency. In addition, itsoperation as an inverter confirms the CMOSFET structured device to be normaland effective in function. |
| |
| Keywords: | strained SiGe/Si quantum well channel heterostructure CMOSFET poly-SiGe gate |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理》浏览原始摘要信息 |
|
点击此处可从《中国物理》下载免费的PDF全文 |
|
