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| 在C_(70)固体p-GaAs结构中的甚深深能级 | |
| 引用本文： | 冉广照,陈源,陈开茅,张晓岚,刘鸿飞.在C_(70)固体p-GaAs结构中的甚深深能级[J].物理学报,2004,53(10). |
| 作者姓名： | 冉广照 陈源 陈开茅 张晓岚 刘鸿飞 |
| 作者单位： | 1. 北京大学物理学院,北京,100871 2. 福州大学电子科学与应用物理系,福州,350002 3. 北京有色金属研究院,北京,100088 |
| 摘 要： | 发展了恒温电容瞬态数据处理方法 ,称新方法为恒温电容瞬态时间积谱 (ICTTS) .用ICTTS方法测量分析了C70固体 p GaAs异质结的深能级 ,结果发现在C70 固体中存在两个很深的空穴陷阱 ,H1 和H2 ,它们的能级位置分别为Ev 0 85 6eV和Ev 1 0 37eV |
| 关 键 词： | C70 深能级 恒温电容瞬态 |
Highly deep levels in solid C_(70)/p-GaAs structures |
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| Ran Guang-Zhao.Highly deep levels in solid C_(70)/p-GaAs structures[J].Acta Physica Sinica,2004,53(10). | |
| Authors: | Ran Guang-Zhao |
| Affiliation: | Ran Guang-Zhao~ |
| Abstract: | A New method for analyzing the isothermal capacitance transience is suggested, which is referred to as the isothermal capacitance transience-time spectroscopy (ICTTS). The method can be used to observe highly deep levels in semiconductors with wide band gaps near the room temperature. The deep levels of solid C_(70)/p-GaAs heterojunctions are investigated by this method. It is found that there are two hole traps, H_1 and H_2 with level of E_V 0.856 eV and E_V 1.037 eV in solid C_(70), respectively. |
| Keywords: | C_(70) deep levels isothermal capacitance transience |
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