| Effect of Ag Doping on Optical and Electrical Properties of ZnO Thin Films |
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| 作者姓名： | 黎瑾 张子瑜 张杨 林碧霞 傅竹西 |
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| 作者单位： | DepartmentofPhysics,UniversityofScienceandTechnologyofChina,Hefei230026 |
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| 摘 要： | ![]()
ZnO thin films were prepared on p-type Si (100) substrates by the sol-gel process. The influence of Ag doping at a content of 0.002% on the photoluminescence and current-voltage (I - V) characteristics of ZnO thin films has been investigated. It is found that Ag doping leads to a pronounced increase in the intensity of near band edge emission at 3.23eV and a remarkable red shift of the visible broadband at room temperature. The I - V characteristics of ZnO/p-Si heterojunctions are also changed. These results could be explained by Ag substituting for Zn in Ag doped ZnO thin films.
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| 关 键 词： | 半导体 银添加剂 二极管 光致发光 击穿电压 |
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