| 在蓝宝石衬底上外延生长ZnGa2O4纳米线及其表征 |
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| 引用本文： | 李康,李鹏坤,熊庭辉,孙姝婧,陈晨龙.在蓝宝石衬底上外延生长ZnGa2O4纳米线及其表征[J].人工晶体学报,2019,48(6):992-996. |
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| 作者姓名： | 李康 李鹏坤 熊庭辉 孙姝婧 陈晨龙 |
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| 作者单位： | 中国科学院福建物质结构研究所,中科院光电材料化学与物理重点实验室,福州350002;中国科学院大学,北京100049;中国科学院福建物质结构研究所,中科院光电材料化学与物理重点实验室,福州350002 |
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| 基金项目： | 福建省“百人计划”(第四批)项目;国家自然科学基金(61774158);福建省自然科学基金(2018J01110) |
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| 摘 要： | 使用一种简单的化学气相沉积法成功地在c面蓝宝石衬底上外延生长了整齐排列的ZnGa2O4单晶纳米线。研究了在不同生长温度和生长压力下外延生长ZnGa2O4纳米线,并使用XRD,SEM和TEM对产物进行了表征。结果表明,在生长条件为980℃和100Torr时,可以外延生长出整齐排列的ZnGa2O4纳米线。所制备的ZnGa2O4纳米线直径为60~150nm,并遵循Au催化的VLS生长机制沿其四个结晶学方向在蓝宝石上外延生长。分析了纳米线沿四个方向生长的原因,并对纳米线的光致发光性能进行了探讨。
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| 关 键 词： | ZnGa2O4纳米线 化学气相沉积法 光致发光 蓝宝石衬底 |
Epitaxial Growth and Characterization of ZnGa2O4 Nanowires on Sapphire Substrate |
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| LI Kang,LI Peng-kun,XIONG Ting-hui,SUN Shu-jing,CHEN Chen-long.Epitaxial Growth and Characterization of ZnGa2O4 Nanowires on Sapphire Substrate[J].Journal of Synthetic Crystals,2019,48(6):992-996. |
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| Authors: | LI Kang LI Peng-kun XIONG Ting-hui SUN Shu-jing CHEN Chen-long |
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| Affiliation: | (Key Laboratory of Optoelectronic Materials Chemistry and Physics,Fujian Institute of Research on the Structure of Matter,Chinese Academy of Science,Fuzhou 350002,China;University of Chinese Academy of Sciences,Beijing 100049,China) |
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| Abstract: | Well-aligned single-crystalline ZnGa2O4 nanowires were successfully epitaxially grown on c-plane sapphire substrate by a convenient chemical vapor deposition(CVD)method.Different growth temperatures and growth pressures to epitaxially grow ZnGa2O4 were investigated and the as-prepared samples were characterized by XRD,SEM,and TEM.It was found that well-aligned ZnGa2O4 nanowires can be epitaxially grown on c-plane sapphire substrate at 980℃and 100 Torr.The as-prepared ZnGa2O4 nanowires have a diameter of 60-150 nm,and epitaxially grow in four crystallographic directions following the Au-catalyzed VLS growth mechanism on the sapphire.The mechanism for the growth of nanowires in four directions was disscussed,and the photoluminescence properties of ZnGa2O4 nanowires were characterized. |
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| Keywords: | ZnGa2 O4 nanowire chemical vapor deposition method photoluminescence sapphire substrate |
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