Comparative research on the transmission-mode GaAs photocathodes of exponential-doping structures |
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| Authors: | Chen Liang ab Qian Yun-Sheng b Zhang Yi-Jun b and Chang Ben-Kang |
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| Affiliation: | b) a) Institute of Optoelectronics Technology,China Jiliang University,Hangzhou 310018,China b) Institute of Electronic Engineering & Optoelectronics Technology,Nanjing University of Science and Technology,Nanjing 210094,China |
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| Abstract: | Early research has shown that the varied doping structures of the active layer of GaAs photocathodes have been proven to have a higher quantum efficiency than uniform doping structures.On the basis of our early research on the surface photovoltage of GaAs photocathodes,and comparative research before and after activation of reflection-mode GaAs photocathodes,we further the comparative research on transmission-mode GaAs photocathodes.An exponential doping structure is the typical varied doping structure that can form a uniform electric field in the active layer.By solving the one-dimensional diffusion equation for no equilibrium minority carriers of transmission-mode GaAs photocathodes of the exponential doping structure,we can obtain the equations for the surface photovoltage(SPV) curve before activation and the spectral response curve(SRC) after activation.Through experiments and fitting calculations for the designed material,the body-material parameters can be well fitted by the SPV before activation,and proven by the fitting calculation for SRC after activation.Through the comparative research before and after activation,the average surface escape probability(SEP) can also be well fitted.This comparative research method can measure the body parameters and the value of SEP for the transmission-mode GaAs photocathode more exactly than the early method,which only measures the body parameters by SRC after activation.It can also help us to deeply study and exactly measure the parameters of the varied doping structures for transmission-mode GaAs photocathodes,and optimize the Cs-O activation technique in the future. |
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| Keywords: | GaAs photocathode surface photovoltage electron diffusion length surface escape prob- ability |
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