| Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate |
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| 引用本文： | 褚旭龙,刘增,支钰崧,刘媛媛,张少辉,吴超,高昂,李培刚,郭道友,吴真平,唐为华.Self-powered solar-blind photodiodes based on EFG-grown(100)-dominant β-Ga2O3 substrate[J].中国物理 B,2021(1). |
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| 作者姓名： | 褚旭龙 刘增 支钰崧 刘媛媛 张少辉 吴超 高昂 李培刚 郭道友 吴真平 唐为华 |
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| 作者单位： | Laboratory of Information Functional Materials and Devices;Center of Materials Science and Optoelectronics Engineering;The Engineering Research Center for Semiconductor Integrated Technology;China Aerospace System Simulation Technology Co.;Division of Interdisciplinary and Comprehensive Research&Platform for Characterization and Test;Center for Optoelectronics Materials and Devices&Key Laboratory of Optical Field Manipulation of Zhejiang Province;School of Nano-Tech and Nano-Bionics;College of Electronic and Optical Engineering&College of Microelectronics;National and Local Joint Engineering Laboratory for RF Integration and Micro-Packing Technologies |
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| 基金项目： | Project supported by BUPT Excellent Ph.D.Students Foundation(Grant No.CX2020314);the National Natural Science Foundation of China(Grant Nos.61774019,51572033,and 51572241);the Fund of State Key Laboratory of Information Photonics and Optical Communications(BUPT);the Fundamental Research Funds for the Central Universities,China。 |
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| 摘 要： | We report the edge-defined-film-fed(EFG)-grown β-Ga2O3-based Schottky photodiodes.The device has a reverse leakage current of ~nA and a rectified ratio of ~104 at ±5 V.In addition,the photodiode detector shows a dark current of 0.3 pA,a photo-responsivity(R) of 2.875 mA/W,a special detectivity(D*) of 1010 Jones,and an external quantum efficiency(EQE) of 1.4% at zero bias,illustrating a self-powered operation.This work may advance the development of the Ga2O3-based Schottky diode solar-blind photodetectors.
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| 关 键 词： | β-Ga2O3substrate Schottky photodiode solar-blind detection |
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