Strain-tunable electronic and optical properties of h-BN/BC_3 heterostructure with enhanced electron mobility |
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| Affiliation: | 1.School of Physics, Henan Normal University, Xinxiang 453007, China;2.School of Science, Henan Institute of Technology, Xinxiang 453003, China |
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| Abstract: | By using first-principles calculation, we study the properties of h-BN/BC_3 heterostructure and the effects of external electric fields and strains on its electronic and optical properties. It is found that the semiconducting h-BN/BC_3 has good dynamical stability and ultrahigh stiffness, enhanced electron mobility, and well-preserved electronic band structure as the BC_3 monolayer. Meanwhile, its electronic band structure is slightly modified by an external electric field. In contrast,applying an external strain can mildly modulate the electronic band structure of h-BN/BC_3 and the optical property exhibits an apparent redshift under a compressive strain relative to the pristine one. These findings show that the h-BN/BC_3 hybrid can be designed as optoelectronic device with moderately strain-tunable electronic and optical properties. |
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| Keywords: | heterostructure electronic and optical properties first-principles calculation |
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