Bias-controlled spin memory and spin injector scheme in the tunneling junction with a single-molecule magnet |
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| Affiliation: | 1.Faculty of Mathematics and Physics, Huaiyin Institute of Technology, Huaian 223003, China;2.Nano Science and Technology Institute, University of Science and Technology of China, Suzhou 215123, China |
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| Abstract: | A bias-controlled spin-filter and spin memory is theoretically proposed, which consists of the junction with a singlemolecule magnet sandwiched between the nonmagnetic and ferromagnetic(FM) leads. By applying different voltage pulses Vwriteacross the junction, the spin direction of the single-molecule magnet can be controlled to be parallel or anti-parallel to the magnetization of the FM lead, and the spin direction of SMM can be "read out" either by the magneto-resistance or by the spin current with another series of small voltage pulses V_(probe). It is shown that the polarization of the spin current is extremely high(up to 100%) and can be manipulated by the full-electric manner. This device scheme can be compatible with current technologies and has potential applications in high-density memory devices. |
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| Keywords: | single-molecule magnet spin-transfer torque spin-dependent electron tunneling |
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