| Fang–Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
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| 作者单位： | 1.Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;2.Key Laboratory of Wide Bandgap Semiconductor Materials, Ministry of Education, Xi'an 710071, China;3.Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi'an 710048, China |
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| 基金项目： | Project supported by the Xi'an Science and Technology Program, China (Grant No. 2019217814GXRC014CG015-GXYD14.3) and the Open Project of Key Laboratory of Wide Band-gap Semiconductor Materials, Ministry of Education, China (Grant No. Kdxkf2019-01). |
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| 摘 要： |
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| 收稿时间： | 2020-11-27 |
Fang-Howard wave function modelling of electron mobility in AlInGaN/AlN/InGaN/GaN double heterostructures |
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| Affiliation: | 1.Department of Electronic Engineering, Xi'an University of Technology, Xi'an 710048, China;2.Key Laboratory of Wide Bandgap Semiconductor Materials, Ministry of Education, Xi'an 710071, China;3.Xi'an Key Laboratory of Power Electronic Devices and High Efficiency Power Conversion, Xi'an 710048, China |
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| Abstract: | To study the electron transport properties in InGaN channel-based heterostructures,a revised Fang-Howard wave function is proposed by combining the effect of GaN back barrier.Various scattering mechanisms,such as dislocation impurity(DIS) scattering,polar optical phonon(POP) scattering,piezoelectric field(PE) scattering,interface roughness(IFR) scattering,deformation potential(DP) scattering,alloy disorder(ADO) scattering from InGaN channel layer,and temperature-dependent energy bandgaps are considered in the calculation model.A contrast of AlInGaN/AlN/InGaN/GaN double heterostructure(DH) to the theoretical AlInGaN/AlN/InGaN single heterostructure(SH) is made and analyzed with a full range of barrier alloy composition.The effect of channel alloy composition on InGaN channel-based DH with technologically important Al(In,Ga)N barrier is estimated and optimal indium mole fraction is 0.04 for higher mobility in DH with Al_(0.4)In_(0.07)Ga_(0.53)N barrier.Finally,the temperature-dependent two-dimensional electron gas(2 DEG) density and mobility in InGaN channel-based DH with Al_(0.83)In_(0.13)Ga_(0.0)4 N and Al_(0.4)In_(0.07)Ga_(0.53)N barrier are investigated.Our results are expected to conduce to the practical application of InGaN channel-based heterostructures. |
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| Keywords: | scattering mechanism double heterostructures electron mobility InGaN channel |
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