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Electronic structure and optical properties of zinc-blende GaN quantum dots |
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| Authors: | Feng Dong-Hai Jia Tian-Qing and Xu Zhi-Zhan |
| Affiliation: | Laboratory for High Intensity Optics, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China; State Key Laboratory for Optical and Electric Materials and Technology, Zhongshan University, Guangzhou 510275, China |
| Abstract: | The energy levels of zinc-blende GaN quantum dots (QDs) are studied within the framework of the effective-mass envelope-function approximation. The dependence of the energy of electron and hole states on the quantum dot (QD) size is presented. The selection rules for optical transitions are given and the oscillator strengths of the dipole-allowed transitions for various QD radii are calculated with the wavefunctions of quantized energy levels. The theoretical absorption spectrum of GaN QDs is in good agreement with the existing experimental result. |
| Keywords: | electronic structure GaN quantum dots optical properties |
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