Influence of oxygen on the growth of cubic boron nitride thin films by plasma-enhanced chemical vapour deposition |
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| Authors: | Yang Hang-Sheng Nie An-Min Qiu Fa-Min |
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| Affiliation: | State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University, Hangzhou 310027, China |
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| Abstract: | Cubic boron nitride thin films were deposited on siliconsubstrates by low-pressure inductively coupled plasma-enhancedchemical vapour deposition. It was found that the introduction ofO2 into the deposition system suppresses both nucleation andgrowth of cubic boron nitride. At a B2H6 concentration of2.5% during film deposition, the critical O2 concentrationallowed for the nucleation of cubic boron nitride was found to beless than 1.4%, while that for the growth of cubic boron nitridewas higher than 2.1%. Moreover, the infrared absorption peakobserved at around 1230--1280~cm-1, frequently detected forcubic boron nitride films prepared using non-ultrahigh vacuumsystems, appears to be due to the absorption of boron oxide, acontaminant formed as a result of the oxygen impurity. Therefore,the existence of trace oxygen contamination in boron nitride filmscan be evaluated qualitatively by this infrared absorption peak. |
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| Keywords: | cubic boron nitride films infrared spectroscopy plasma-enhanced chemical vapour deposition |
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