The application of low energy ion scattering spectroscopy (LEIS) in sub 28‐nm CMOS technology |
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| Authors: | Kornelia Dittmar Dina H Triyoso Elke Erben Joachim Metzger Robert Binder Hidde H Brongersma Martin Weisheit Hans‐Jürgen Engelmann |
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| Affiliation: | 1. GLOBALFOUNDRIES Dresden Module One Limited Liability Company and Co. KG, Dresden, Germany;2. GLOBALFOUNDRIES, Malta, NY, USA;3. Calipso B.V, Waalre, The Netherlands |
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| Abstract: | With the transition to ≤28‐nm CMOS technology nodes, the surface analytical challenges with regard to steadily decreasing dimensions and still growing materials options raise the demand of high performing surface analysis techniques. Characterization of ultrathin films and multilayer stacks, especially in high‐k metal gate stacks, by means of low energy ion scattering spectroscopy (LEIS) with its monolayer sensitivity has been established as a very useful analysis technique next to Auger electron spectroscopy, X‐ray photoelectron spectroscopy , and time‐of‐flight secondary ion mass spectrometry. Questions regarding film nucleation, growth, coverage, and diffusion can be answered, thereby enabling those processes to be controlled appropriately. In this work, growth studies of ALD HfO2 and TiN are shown, as well as film thickness determination based on surface spectra. PVD aluminum and lanthanum, acting as work function metals on the gate oxide, were deposited, and their film formation and closure were investigated. Further application fields of LEIS have emerged from the characterization of in‐die features on patterned wafers. As presented on test arrays, it is possible to detect material deep in trenches. This is an advantage if residues need to be identified after etch or clean processes. |
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| Keywords: | ALD growth study high‐k metal gate LEIS PVD work function metal |
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