Effect of N5+ ion implantation on optical and gas sensing properties of WO3 films |
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| Authors: | Ashutosh Kumar Sunita Keshri |
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| Affiliation: | Department of Applied Physics, Birla Institute of Technology, Ranchi, Jharkhand, India |
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| Abstract: | In this paper we report the optical and gas sensing behaviours of tungsten oxide (WO3) films, implanted with 45‐keV N5 + ions of different fluences in the range 1 × 1015 to 1 × 1017 cm–2. The film with fluence 1 × 1015 cm–2 shows the most intense PL spectrum with two prominent peaks near UV and blue regions. The morphological changes because of ion implantation are also investigated by atomic force microscopy. Because of implantation the gas sensitivity of the film, in exposure of methane, is found to increase with reasonably fast response and recovery times. With the increase of the concentration of methane, the sensors show better result. Present work also includes the effect of N5 + ion implantation on the structural property of WO3 films. Copyright © 2015 John Wiley & Sons, Ltd. |
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| Keywords: | ion implantation WO3 film gas sensitivity optical property |
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