| A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor |
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| 作者姓名： | 薛春来 姚飞 时文华 成步文 王红杰 余金中 王启明 |
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| 作者单位： | State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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| 基金项目： | Supported by the National High-Technology Research and Development Programme of China under Grant No 2006AA03Z0415, the Major State Basic Research Programme of China under Grant No 2006CB302802, and the National Natural Science Foundation of China under Grant No 60676005. |
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| 摘 要： | With a crystal orientation dependent on the etch rate of Si in KOH-based solution, a base-emitter self-Migned large-area multi-finger configuration power SiGe heterojunction bipolar transistor （HBT） device （with an emitter area of about 880μm^2） is fabricated with 2μm double-mesa technology. The maximum dc current gain is 226.1. The collector-emitter junction breakdown voltage BVcEo is 10 V and the collector-base junction breakdown voltage BVcBo is 16 V with collector doping concentration of 1 × 10^17 cm^-3 and thickness of 400nm. The device exhibited a maximum oscillation frequency fmax of 35.5 GHz and a cut-off frequency fT of 24.9 GHz at a dc bias point of Ic = 70 mA and the voltage between collector and emitter is VCE = 3 V. Load pull measurements in class-A operation of the SiGe HBT are performed at 1.9 GHz with input power ranging from OdBm to 21 dBm. A maximum output power of 29.9dBm （about 977mW） is obtained at an input power of 18.SdBm with a gain of 11.47dB. Compared to a non-self-aligned SiGe HBT with the same heterostructure and process, fmax and fT are improved by about 83.9% and 38.3%, respectively.
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| 关 键 词： | 发射体 异质结 晶体三极管 二极管 |
| 修稿时间： | 2006-12-08 |
A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor |
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| XUE Chun-Lni, YAO Fei, SHI Wen-Hun, CHENG Bu-Wen, WANG Hong-Jie, YU Jin-Zhong, WANG Qi-Ming State Key Laboratory on Integrated Optoelectronics.A Base-Emitter Self-Aligned Multi-Finger Sil-xGex/Si Power Heterojunction Bipolar Transistor[J].Chinese Physics Letters,2007,24(7):2125-2127. |
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| Authors: | XUE Chun-Lni YAO Fei SHI Wen-Hun CHENG Bu-Wen WANG Hong-Jie YU Jin-Zhong WANG Qi-Ming State Key Laboratory on Integrated Optoelectronics |
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| Affiliation: | XUE Chun-Lni, YAO Fei, SHI Wen-Hun, CHENG Bu-Wen, WANG Hong-Jie, YU Jin-Zhong, WANG Qi-Ming State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 |
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