| Molecular Beam Epitaxy Growth and Photoluminescence of Type-Ⅱ （GaAs1-xSbx／InyGa1-yAs）／GaAs Bilayer Quantum Well |
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| 引用本文： | 徐晓华,牛智川,倪海桥,徐应强,张玮,贺正宏,韩勤,吴荣汉.Molecular Beam Epitaxy Growth and Photoluminescence of Type-Ⅱ （GaAs1-xSbx／InyGa1-yAs）／GaAs Bilayer Quantum Well[J].中国物理快报,2004,21(9):1831-1834. |
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| 作者姓名： | 徐晓华 牛智川 倪海桥 徐应强 张玮 贺正宏 韩勤 吴荣汉 |
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| 作者单位： | NationalLaboratoryforSuperlatticeandMicrostructures,InstituteofSemiconductors,ChineseAcademyofSciences,POBox912,Beijing100083 |
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| 摘 要： | We report a systematical study on the molecular beam epitaxy growth and optical property of (GaAs1-xSbx/InyGa1-yAs)/GaAs bilayer quantum we]] (BQW) structures. It is shown that the growth temperature of the wells and the sequence of layer growth have significant influence on the interface quality and the subsequent photoluminescence (PL) spectra. Under optimized growth conditions, three high-quality (GaAsSb0.29/In0.4 GaAs)/GaAs BQWs are successfully fabricated and a room temperature PL at 1314 nm is observed. The transition mechanism in the BQW is also discussed by photoluminescence and photoreflectance measurements. The results confirm experimentally a type-Ⅱ band alignment of the interface between the GaAsSb and InGaAs layers.
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| 关 键 词： | 分子束外延生长 光致发光 双分子层量子阱 砷化镓结构 X衍射分析 |
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