中国物理B ›› 2004, Vol. 13 ›› Issue (7): 1163-1166.doi: 10.1088/1009-1963/13/7/035

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Quantum confinement analysis of nanostructures in oxidation of SiGe alloys

刘世荣1, 黄伟其2   

  1. (1)Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China; (2)Department of Physics, Guizhou University, Guiyang 550025, China; Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China
  • 收稿日期:2003-10-15 修回日期:2004-01-16 出版日期:2004-07-05 发布日期:2005-07-05
  • 基金资助:
    Project supported by the Natural Science Foundation of Guizhou Province, China (Grant No 3029(2000)).

Quantum confinement analysis of nanostructures in oxidation of SiGe alloys

Huang Wei-Qi (黄伟其)ab, Liu Shi-Rong (刘世荣)b   

  1. a Department of Physics, Guizhou University, Guiyang 550025, China; b Analytical Electron Microscope Lab, Chinese Academy of Sciences, Guiyang 550003, China
  • Received:2003-10-15 Revised:2004-01-16 Online:2004-07-05 Published:2005-07-05
  • Supported by:
    Project supported by the Natural Science Foundation of Guizhou Province, China (Grant No 3029(2000)).

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摘要： We report the investigation on the oxidation behaviour of Si_{1-x}Ge_x alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6－2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8－1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree－Fock－Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.

关键词: quantum confinement, PL spectra, nanostructure, rapid oxidation

Abstract: We report the investigation on the oxidation behaviour of Si$_{1-x}$Ge$_x$ alloys (x=0.05, 0.15, and 0.25). It was found for the first time that a nanocap (thickness: 1.6－2.0nm) was formed on the oxide film after fast oxidation. Some new peaks in photoluminescence spectra were discovered, which could be related to the Ge nanocap, the Ge nanolayer (thickness: 0.8－1.2nm) and the Ge nanoparticles (with various diameters from 2.6nm to 7.4nm), respectively. A suitable model and several new calculating formulae combined with the Unrestricted Hartree－Fock－Roothaan (UHFR) method and quantum confinement analysis have been proposed to interpret the PL spectra and the nanostructure mechanism in the oxide and Ge segregation.

Key words: quantum confinement, PL spectra, nanostructure, rapid oxidation

中图分类号:  (Oxidation)

  • 81.65.Mq
78.55.Hx (Other solid inorganic materials) 78.67.Bf (Nanocrystals, nanoparticles, and nanoclusters)