中国物理B ›› 2009, Vol. 18 ›› Issue (7): 2912-2919.doi: 10.1088/1674-1056/18/7/049

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Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)

范隆1, 赵元富1, 郝跃2, 张进城2, 高志远2, 李培咸2   

  1. (1)Beijing Microelectronics Technology Institute, Beijing 100076, China; (2)The School of Microelectronics, Xidian University, Xi'an 710071, China;Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China;Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • 收稿日期:2007-04-15 修回日期:2008-11-05 出版日期:2009-07-20 发布日期:2009-07-20
  • 基金资助:
    Project supported by the National Defense Scientific and Technical Pre-Research Program of China (Grant Nos 51311050112, 51308040301 and 51308030102), the National Defense Fundamental Research Program of China (Grant No A1420060156), and the National Basic Research Program of China (Grant No 513270407).

Degraded model of radiation-induced acceptor defects for GaN-based high electron mobility transistors (HEMTs)

Fan Long(范隆)a)†, Hao Yue(郝跃)b)c)d), Zhao Yuan-Fu(赵元富)a), Zhang Jin-Cheng(张进城)b)c)d), Gao Zhi-Yuan(高志远)b) c) d), and Li Pei-Xian(李培咸)b)c)d)   

  1. a Beijing Microelectronics Technology Institute, Beijing 100076, China; b The School of Microelectronics, Xidian University, Xi'an 710071, China; c Key Laboratory of Fundamental Science for National Defense of Wide Bandgap Semiconductor Technology, Xidian University, Xi'an 710071, China; d Key Laboratory for Wide Band-gap Semiconductor Materials and Devices of Ministry of Education, Xidian University, Xi'an 710071, China
  • Received:2007-04-15 Revised:2008-11-05 Online:2009-07-20 Published:2009-07-20
  • Supported by:
    Project supported by the National Defense Scientific and Technical Pre-Research Program of China (Grant Nos 51311050112, 51308040301 and 51308030102), the National Defense Fundamental Research Program of China (Grant No A1420060156), and the National Basic Research Program of China (Grant No 513270407).

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摘要： Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures, we set up a radiation damage model of AlGaN/GaN high electron mobility transistor (HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results, consistent with the experimental results, indicate that thin AlGaN barrier layer, high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT; when the acceptor concentration induced is less than 1014cm-3, the shifts in threshold voltage are not obvious; only when the acceptor concentration induced is higher than 1016cm-3, will the shifts of threshold voltage remarkably increase; the increase of threshold voltage, resulting from radiation induced acceptor, mainly contributes to the degradation in drain saturation current of the current--voltage (I--V) characteristic, but has no effect on the transconductance in the saturation area.

Abstract: Using depletion approximation theory and introducing acceptor defects which can characterize radiation induced deep-level defects in AlGaN/GaN heterostructures, we set up a radiation damage model of AlGaN/GaN high electron mobility transistor (HEMT) to separately simulate the effects of several main radiation damage mechanisms and the complete radiation damage effect simultaneously considering the degradation in mobility. Our calculated results, consistent with the experimental results, indicate that thin AlGaN barrier layer, high Al content and high doping concentration are favourable for restraining the shifts of threshold voltage in the AlGaN/GaN HEMT; when the acceptor concentration induced is less than 1014cm-3, the shifts in threshold voltage are not obvious; only when the acceptor concentration induced is higher than 1016cm-3, will the shifts of threshold voltage remarkably increase; the increase of threshold voltage, resulting from radiation induced acceptor, mainly contributes to the degradation in drain saturation current of the current--voltage (I--V) characteristic, but has no effect on the transconductance in the saturation area.

Key words: GaN-based high electron mobility transistor (HEMT) radiation, acceptor, defects

中图分类号:  (III-V semiconductors)

  • 71.55.Eq
85.30.Tv (Field effect devices) 73.40.Kp (III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions) 61.72.uj (III-V and II-VI semiconductors) 61.82.Fk (Semiconductors)