中国物理B ›› 2011, Vol. 20 ›› Issue (9): 94206-094206.doi: 10.1088/1674-1056/20/9/094206

• CLASSICAL AREAS OF PHENOMENOLOGY • 上一篇    下一篇

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

关宝璐, 任秀娟, 李川, 李硕, 史国柱, 郭霞   

  1. Opto-electronic Devices Research Laboratory, Beijing University of Technology, Beijing 100124, China
  • 收稿日期:2011-02-14 修回日期:2011-04-22 出版日期:2011-09-15 发布日期:2011-09-15

A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well vertical-cavity surface-emitting laser

Guan Bao-Lu(关宝璐), Ren Xiu-Juan(任秀娟), Li Chuan(李川), Li Shuo(李硕), Shi Guo-Zhu(史国柱), and Guo Xia(郭霞)†   

  1. Opto-electronic Devices Research Laboratory, Beijing University of Technology, Beijing 100124, China
  • Received:2011-02-14 Revised:2011-04-22 Online:2011-09-15 Published:2011-09-15

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摘要： A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

Abstract: A low-threshold and high-power oxide-confined 850-nm AlInGaAs strained quantum-well (QW) vertical-cavity surface-emitting laser (VCSEL) based on an intra-cavity contacted structure is fabricated. A threshold current of 1.5 mA for a 22 μm oxide aperture device is achieved, which corresponds to a threshold current density of 0.395 kA/cm2. The peak output optical power reaches 17.5 mW at an injection current of 30 mA at room temperature under pulsed operation. While under continuous-wave (CW) operation, the maximum power attains 10.5 mW. Such a device demonstrates a high characteristic temperature of 327 K within a temperature range from -12℃ to 96℃ and good reliability under a lifetime test. There is almost no decrease of the optical power when the device operates at a current of 5 mA at room temperature under the CW injection current.

Key words: vertical-cavity surface-emitting laser, strained quantum-well, oxide confinement

中图分类号:  (Semiconductor lasers; laser diodes)

  • 42.55.Px
42.60.By (Design of specific laser systems) 42.72.Ai (Infrared sources)