CaCu3Ti4O12陶瓷的介电特性与弛豫机理

成鹏飞; 王辉; 李盛涛

doi:10.7498/aps.62.057701

摘要

本文采用Novocontrol宽频介电谱仪在-100 ℃100 ℃温度范围内、0.1 Hz10 MHz频率范围内测量了表面层打磨前后CaCu3Ti4O12陶瓷的介电特性, 分析了CaCu3Ti4O12陶瓷的介电弛豫机理. 首先, 基于对宏观壳-心结构的定量分析, 排除了巨介电常数起源于表面层效应的可能性; 其次, 基于经典Maxwell-Wagner夹层极化及其活化能物理本质的分析, 排除了巨介电常数起源于经典Maxwell-Wagner极化的可能性; 最后, 依据晶界Schottky势垒与本征点缺陷的本质联系, 提出了巨介电常数起源于Schottky势垒边界陷阱电子弛豫的新机理. 陷阱电子弛豫机理反映了CaCu3Ti4O12陶瓷本征点缺陷、电导、介电常数之间的本质关系.

关键词:

Abstract

In this paper, the dielectric property of CaCu3Ti4O12 ceramic is measured by Novocontrol wide band dielectric spectrometer in a temperature range of -100-100 ℃ and frequency range of 0.1 Hz-10 MHz, and the corresponding dielectric relaxation mechanism is discussed. Firstly, on the basis of quantitative analysis of macroscopic shell-core structure, the possibility of colossal dielectric constant (CDC) originating from the surface insulated layer effect is rejected. Secondly, after the analysis of the nature of classical Maxwell-Wagner sandwich polarization and its activation energy, classical Maxwell-Wagner mechanism is also abandoned. Finally, a new model of trapped electron relaxation at the boundary of Schottky barrier is proposed. The new mechanism correctly reflects the essential connection between intrinsic point defects, conductivity and dielectric constant of CaCu3Ti4O12material.

Keywords:

作者及机构信息

1.
西安工程大学理学院, 西安 710048;

2.
西安交通大学电力设备电气绝缘国家重点实验室, 西安 710049

基金项目: 国家自然科学基金(批准号: 51277138, 50972118)、陕西省教育厅科研专项(批准号: 12JK0434) 和西安工程大学博士科研启动基金(批准号: BS0814) 资助的课题.

Authors and contacts

1.
School of Science, Xi'an Polytechnic University, Xi'an 710048, China;

2.
State Key Laboratory of Electrical Insulation and Power Equipment, Xi'an Jiaotong University, Xi'an 710049, China

Funds: Project supported by the National Natural Science Foundation of China (Grant Nos. 51277138, 50972118), the Scientific Research Plan Projects of Education Department of Shaanxi Province of China (Grant No. 12JK0434), and the Doctoral Scientific Research Foundation (Grant No. BS0814).

参考文献

[1]	Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323
[2]	Li J, Sleight A W, Subramanian M A 2005 Solid State Comm. 135 260
[3]	Sinclair D C, Adams T B, Morrison F D, West A R 2002 Appl. Phys. Lett. 80 2153
[4]	Adams T B, Sinclair D C, West A R 2002 Adv. Mater. 14 321
[5]	Wang C C, Zhang L W 2006 Appl. Phys. Lett. 88 042906
[6]	Chen J D, Liu Z Y 1980 Dielectric Physics (Beijing: Machine Press) p178 (in Chinese) [陈季丹, 刘子玉 1980 电介质物理学 (北京: 机械工业出版社) 第178页]
[7]	Luo F C, He J L, Hu J, Lin Y H 2009 J. Appl. Phys. 105 076104
[8]	Li J Y, Zhao X T, Li S T, Alim M A 2010 J. Appl. Phys. 108 104104
[9]	Cheng P F, Li S T, Li J Y 2012 Adv. Mater. Res. 393-395 24
[10]	Cheng P F, Li S T, Li J Y 2012 Acta Phys. Sin. 61 18 (in Chinese)[成鹏飞, 李盛涛, 李建英 2012 物理学报 61 18]
[11]	Deng G, Yamada T, Muralt P 2007 Appl. Phys. Lett. 91 202903
[12]	Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]
[13]	Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902
[14]	Cheng P F, Li S T, Li J Y 2010 Acta Phys. Sin. 59 560 (in Chinese) [成鹏飞, 李盛涛, 李建英 2010 物理学报 59 560]
[15]	Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]
[16]	Li M, Feterra A, Sinclair D C, West A R 2006 Appl. Phys. Lett. 88 232903

施引文献

[1]	Subramanian M A, Li D, Duan N, Reisner B A, Sleight A W 2000 J. Solid State Chem. 151 323
[2]	Li J, Sleight A W, Subramanian M A 2005 Solid State Comm. 135 260
[3]	Sinclair D C, Adams T B, Morrison F D, West A R 2002 Appl. Phys. Lett. 80 2153
[4]	Adams T B, Sinclair D C, West A R 2002 Adv. Mater. 14 321
[5]	Wang C C, Zhang L W 2006 Appl. Phys. Lett. 88 042906
[6]	Chen J D, Liu Z Y 1980 Dielectric Physics (Beijing: Machine Press) p178 (in Chinese) [陈季丹, 刘子玉 1980 电介质物理学 (北京: 机械工业出版社) 第178页]
[7]	Luo F C, He J L, Hu J, Lin Y H 2009 J. Appl. Phys. 105 076104
[8]	Li J Y, Zhao X T, Li S T, Alim M A 2010 J. Appl. Phys. 108 104104
[9]	Cheng P F, Li S T, Li J Y 2012 Adv. Mater. Res. 393-395 24
[10]	Cheng P F, Li S T, Li J Y 2012 Acta Phys. Sin. 61 18 (in Chinese)[成鹏飞, 李盛涛, 李建英 2012 物理学报 61 18]
[11]	Deng G, Yamada T, Muralt P 2007 Appl. Phys. Lett. 91 202903
[12]	Yang Y, Li S T 2009 Acta Phys. Sin. 58 6376 (in Chinese) [杨雁, 李盛涛 2009 物理学报 58 6376]
[13]	Cheng P F, Li S T, Zhang L, Li J Y 2008 Appl. Phys. Lett. 93 012902
[14]	Cheng P F, Li S T, Li J Y 2010 Acta Phys. Sin. 59 560 (in Chinese) [成鹏飞, 李盛涛, 李建英 2010 物理学报 59 560]
[15]	Cheng P F, Li S T, Li J Y 2009 Acta Phys. Sin. 58 5721 (in Chinese) [成鹏飞, 李盛涛, 李建英 2009 物理学报 58 5721]
[16]	Li M, Feterra A, Sinclair D C, West A R 2006 Appl. Phys. Lett. 88 232903

姓名
邮箱
手机号码
标题
留言内容
验证码

搜索

留言板